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| 2DB1119S PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT * * * * * Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT89-3L Mechanical Data * * * * * * * Case: SOT89-3L Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish -- Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.072 grams (approximate) 3E C4 2C 1B TOP VIEW COLLECTOR 2,4 1 BASE 3 EMITTER Schematic and Pin Configuration Maximum Ratings @TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO ICM IC Value -25 -25 -5 -2 -1 Unit V V V A A Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25C Operating and Storage Temperature Range Symbol PD RJA Tj, TSTG Value 1 125 -55 to +150 Unit W C/W C Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Transition Frequency Output Capacitance Notes: 1. 2. 3. 4. @TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(SAT) VBE(SAT) hFE Min -25 -25 -5 140 40 Typ -0.15 -0.85 200 12 Max -0.1 -0.1 -0.7 -1.2 280 Unit V V V A A V V MHz pF Conditions IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCB = -20V, IE = 0 VEB = -4V, IC = 0 IC = -500mA, IB = -50mA IC = -500mA, IB = -50mA VCE = -2V, IC = -50mA VCE = -2V, IC = -1A VCE = -10V, IC = -50mA f = 100MHz VCB = -10V, IE = 0, f = 1MHz fT Cob No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. DS31298 Rev. 2 - 2 1 of 4 www.diodes.com 2DB1119S (c) Diodes Incorporated 1.0 1.2 PD, POWER DISSIPATION (W) 0.8 1.0 0.8 NEW PRODUCT 0.6 0.6 0.4 0.4 0.2 0.2 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 150 0 0 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 350 300 0.8 0.6 250 200 0.4 150 100 50 0 -IC, COLLECTOR CURRENT (A) Fig. 3 Typical DC Current Gain vs. Collector Current 0.2 0 -IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1 -IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current -IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current DS31298 Rev. 2 - 2 2 of 4 www.diodes.com 2DB1119S (c) Diodes Incorporated 135 120 105 fT, CURRENT GAIN-BANDWIDTH PRODUCT (MHz) 150 250 200 NEW PRODUCT 90 75 60 45 30 15 0 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics 150 100 50 VCE = -10V f = 100MHz 0 0 10 20 30 40 50 60 70 80 90 100 -IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current Ordering Information (Note 5) Device 2DB1119S-13 Notes: 5. Packaging SOT89-3L Shipping 2500/Tape & Reel For packaging details, please see below or go to our website at http://www.diodes.com/ap02007.pdf. Marking Information (Top View) YWW P12BS P12BS = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year ex: 7 = 2007 WW = Week code 01 - 52 Package Outline Dimensions D1 0 20 0. R C SOT89-3L Dim A B H Min 1.40 0.45 0.37 0.35 4.40 1.50 2.40 -- 3.95 0.90 Max 1.60 0.55 0.47 0.43 4.60 1.70 2.60 -- 4.25 1.20 Typ 1.50 0.50 0.42 0.38 4.50 1.60 2.50 1.50 4.10 1.05 E B1 C D D1 E e H L B B1 8 e (4X ) L A All Dimensions in mm D DS31298 Rev. 2 - 2 3 of 4 www.diodes.com 2DB1119S (c) Diodes Incorporated Suggested Pad Layout 1.7 NEW PRODUCT 2.7 0.4 1.9 1.3 0.9 3.0 Unit: mm IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS31298 Rev. 2 - 2 4 of 4 www.diodes.com 2DB1119S (c) Diodes Incorporated |
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